, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor BU607 description ? high voltage: vcev= 330v(min) ? fast switching speed- ? low saturation voltage- : vce(sat)= 1 .ov(max)@ lc= 5a applications ? designed for use in horizontal deflection output stages of tv's and crt's absolute maximum ratings(ta=25t:) symbol vcbo vcev vceo vebo ic i cm ib pc tj tstg parameter collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current collector power dissipation @ tc=25c junction temperature storage temperature range value 330 330 150 6 7 10 4 60 150 -65-150 unit v v v v a a a w ?c c k*. pin 1.base i.bditter 3. collect or (case) to-3 package te , \ 1 | i -4k- d ? u__ ^? 1? ? v%j ^ ^-ran -? r- r.. }pl r / i ^ c 1 iron ohm mm max a 39.00 b 2530 c 7.80 d 090 e 1.40 0 10 26.67 830 1.10 1.60 ?3-) h 548 jl, 1*40 n 1940 0 4.00 u ,30.00 v 4.30 1350 19 $2 420 3020 4.50 ^k ea . t ? b ' 1 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BU607 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat) vbe(sat) hfe icev iebo fr tf parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage dc current gain collector cutoff current emitter cutoff current current-gain ? bandwidth product fall time conditions lc=100ma;lb=0 lc= 5a; ib= 0.65a lc= 5a; ib= 0.65a lc= 2a; vce= 5v; vce= 330v; vbe= -1.5v veb= 6v; lc= 0 lc= 0.5a ; vce= 10v, f,es,= 1mhz lc= 5a; ib1= -ib2= 0.65a, vcc= 40v min 150 10 typ. 15 max 1.0 1.3 15 400 0.75 unit v v v ma ma mhz u s
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